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this is information on a product in full production. august 2012 doc id 18280 rev 2 1/15 15 STD3PK50Z p-channel 500 v, 3 typ., 2.8 a zener-protected supermesh? power mosfet in a dpak package datasheet ? production data features gate charge minimized extremely high dv/dt capability 100% avalanche tested very low intrinsic capacitance improved esd capability applications switching applications description this device is a p-channel zener-protected power mosfet developed using stmicroelectronics? supermesh? technology, achieved through optimization of st?s well established strip-based powermesh? layout. in addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. figure 1. internal schematic diagram note: for the p-channel power mosfets actual polarity of voltages and current has to be reversed. order code v dss r ds(on) max i d p tot STD3PK50Z 500 v < 4 2.8 a 70 w dpak 1 3 tab or tab am11279v1 table 1. device summary order code marking package packaging STD3PK50Z 3pk50z dpak tape and reel www.st.com
contents STD3PK50Z 2/15 doc id 18280 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STD3PK50Z electrical ratings doc id 18280 rev 2 3/15 1 electrical ratings note: for the p-channel power mosfets actual polarity of voltages and current has to be reversed. table 2. absolute maximum ratings symbol parameter value unit v ds drain source voltage 500 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 2.8 a i d drain current (continuous) at t c = 100 c 1.8 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 11 a p tot total dissipation at t c = 25 c 85 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 2.8 a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 200 mj dv/dt (2) 2. i sd 2.8 a, di/dt 200 a/s, v peak v (br)dss peak diode recovery voltage slope 40 v/ns esd gate-source human body model (r = 1,5 k, c = 100 pf) 3kv t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 1.47 c/w rthj-pcb thermal resistance junction-pcb max 50 c/w
electrical characteristics STD3PK50Z 4/15 doc id 18280 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) note: for the p-channel power mosfets actual polarity of voltages and current has to be reversed. table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = 500 v, v ds = 500 v,tc=125 c 1 100 a a i gss gate body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 1.4 a 3 4 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =50 v, f=1 mhz, v gs =0 - 530 - pf c oss output capacitance 50 pf c rss reverse transfer capacitance 25 pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 400 v -32-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -23-pf r g intrinsic gate resistance f = 1mhz open drain - 4.7 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 2.8 a v gs =10 v (see figure 14 ) - 29 4.3 15 - nc nc nc
STD3PK50Z electrical characteristics doc id 18280 rev 2 5/15 the built-in back- to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. note: for the p-channel power mosfets actual polarity of voltages and current has to be reversed. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 250 v, i d = 1.4 a, r g =4.7 , v gs =10 v (see figure 13 ) - 16 15 46 26 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) - 2.8 11.2 ma a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 2.8 a, v gs =0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.8 a, v dd = 60 v di/dt = 100 a/s, (see figure 15 ) - 220 1600 14 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.8 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 15 ) - 280 2100 15 ns nc a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs 1ma, (open drain) 30 - v
electrical characteristics STD3PK50Z 6/15 doc id 18280 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am11259v1 i d 3 2 1 0 0 10 v d s (v) 20 (a) 5 15 25 4 5 5v 6v 7v v g s =10v 6 7 am11260v1 i d 2.5 1.5 0.5 0 0 4 v g s (v) 8 (a) 2 6 10 3 .5 4.5 1.0 2.0 3 .0 4.0 v d s =15v am11261v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.90 0.95 1.00 1.05 1.10 125 i d =1ma am11262v1 r d s (on) 2. 8 2.7 2.6 2.5 0.5 1.5 i d (a) ( ) 1.0 2.0 2.9 3 .0 v g s =10v 2.5 3 .0 3 .1 3 .2 3 . 3 am1126 3 v1
STD3PK50Z electrical characteristics doc id 18280 rev 2 7/15 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. maximum avalanche energy vs starting tj v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =400v i d =2. 8 a 25 12 3 00 200 100 0 400 v d s v d s 50 150 250 3 50 (v) 3 0 am11264v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am11265v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 i d =100 a am11266v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 2.5 0 i d =1.4a v g s =10v am11267v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 20 40 60 8 0 120 140 100 120 140 160 1 8 0 200 i d =2. 8 a v dd =50 v am1126 8 v1
test circuits STD3PK50Z 8/15 doc id 18280 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for diode recovery behavior am11255v1 am11256v1 am11257v1
STD3PK50Z package mechanical data doc id 18280 rev 2 9/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack ? is an st trademark.
package mechanical data STD3PK50Z 10/15 doc id 18280 rev 2 table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
STD3PK50Z package mechanical data doc id 18280 rev 2 11/15 figure 16. dpak (to-252) drawing figure 17. dpak footprint (a) a. all dimensions are in millimeters 006 8 772_h 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
packaging mechanical data STD3PK50Z 12/15 doc id 18280 rev 2 5 packaging mechanical data table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
STD3PK50Z packaging mechanical data doc id 18280 rev 2 13/15 figure 18. tape for dpak (to-252) figure 19. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history STD3PK50Z 14/15 doc id 18280 rev 2 6 revision history table 11. document revision history date revision changes 26-nov-2010 1 first release. 31-aug-2012 2 document status promoted from preliminary data to production data. minor text changes on the cover page.
STD3PK50Z doc id 18280 rev 2 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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